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| SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E30A2CDS, E30A2CDR STACK SILICON DIFFUSED DIODE F E FEATURES Average Forward Current : IO=30A. Reverse Voltage : 200V(Min) POLARITY E30A2CDS (+ Type) E30A2CDR (- Type) G L1 B A MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Average Forward Current Peak 1 Cycle Surge Current Junction Temperature Storage Temperature Range ) SYMBOL VRRM IF(AV) IFSM Tj Tstg RATING 200 30 300 (10ms Condition) -40 200 -40 200 UNIT V A A DIM MILLIMETERS DIM MILLIMETERS _ _ A 9.5 + 0.2 E 3.1+ 0.1 _ F 1.5 B 8.4 + 0.2 G R0.5 C 1.2 _ L1 5 + 0.4 D 1 DIM TYPE POLARITY S L2 R MILLIMETERS _ 19.0 + 1.0 _ 23.0 + 1.0 PD ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Peak Forward Voltage Reverse Voltage Repetitive Peak Reverse Current Reverse Recovery Time Reverse Leakage Current Under High Temperature Temperature Resistance VFM VRM IRRM trr HIR Rth ) TEST CONDITION IFM=100A IR=5mA VR=200V IF=-IR 100mA Ta=150 , VR=VRM Junction to case MIN. 200 TYP. 1.0 MAX. 1.20 50 15 2.5 UNIT V V A S mA /W SYMBOL 2002. 10. 9 Revision No : 1 C D L2 1/1 |
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